| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 2 |
1N4127-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 3 |
1N4127-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N4627-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 5 |
1N4627-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1N4627-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1N827-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 8 |
1N827-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 9 |
2020-6627-30 |
7-18 GHz, directional couplers mini, octave bandwidth |
MA-Com |
| 10 |
2020-6627-30 |
Directional Couplers Mini, Octave Bandwidth |
Tyco Electronics |
| 11 |
2023-6127-06 |
2.6-5.2 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
| 12 |
2023-6127-06 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
| 13 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 14 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 15 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 16 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 17 |
27-FEB |
10 TO 500 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
| 18 |
2N6027-D |
Programmable Unijunction Transistor |
ON Semiconductor |
| 19 |
2SC4227-T1 |
Silicon transistor |
NEC |
| 20 |
2SC4227-T2 |
Silicon transistor |
NEC |
| 21 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
| 22 |
2SJ327-Z |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 23 |
2SJ327-Z-E1 |
P-channel enhancement type |
NEC |
| 24 |
2SJ327-Z-E2 |
P-channel enhancement type |
NEC |
| 25 |
2SJ327-Z-T1 |
P-channel enhancement type |
NEC |
| 26 |
2SJ327-Z-T2 |
P-channel enhancement type |
NEC |
| 27 |
2SK2027-01 |
N-channel MOS-FET |
Fuji Electric |
| 28 |
2SK2527-01MR |
N-channel MOS-FET |
Fuji Electric |
| 29 |
2SK2827-01 |
Power MOSFET |
Fuji Electric |
| 30 |
2SK3527-01 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| | | |
