| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2023-6127-06 |
2.6-5.2 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
| 2 |
2023-6127-06 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
| 3 |
2SK2027-01 |
N-channel MOS-FET |
Fuji Electric |
| 4 |
2SK2527-01MR |
N-channel MOS-FET |
Fuji Electric |
| 5 |
2SK2827-01 |
Power MOSFET |
Fuji Electric |
| 6 |
2SK3527-01 |
N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 7 |
2SK727-01 |
N-Channel Silicon Power MOS-FET |
Fuji Electric |
| 8 |
827-01 |
Motorola case, dimensions, similar with MRP-7 |
Motorola |
| 9 |
827-01 |
CASE DIMENSIONS |
Motorola |
| 10 |
AIC1527-0CN |
Quad USB High-Side Power Switch |
Analog Integrations Corporation |
| 11 |
AIC1527-0CS |
Quad USB High-Side Power Switch |
Analog Integrations Corporation |
| 12 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 13 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 14 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 15 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 16 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 17 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 18 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 19 |
BAP27-01 |
Silicon PIN diode |
Philips |
| 20 |
BC327-016 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 21 |
BC327-025 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 22 |
BC327-040 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 23 |
CASE 27-02 |
Package Outline Dimensions (are in inches) |
Motorola |
| 24 |
CLX27-00 |
HiRel X-Band GaAs Power-MESFET |
Infineon |
| 25 |
CLX27-05 |
HiRel X-Band GaAs Power-MESFET |
Infineon |
| 26 |
DME2127-000 |
Beam-Lead Single N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C |
Skyworks Solutions |
| 27 |
DME3927-000 |
Silicon Beamless Schottky Diodes Pairs and Quads - Ring Quad |
Skyworks Solutions |
| 28 |
DMF2827-000 |
Beam-Lead Series Pair, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band Ku |
Skyworks Solutions |
| 29 |
DWEP27-02 |
Rectifier Diodes & FRED |
IXYS Corporation |
| 30 |
FS6127-01 |
VCXO clock generator IC |
AMI Semiconductor |
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