| No. |
Part Name |
Description |
Manufacturer |
| 1 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 2 |
BDX27-6 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 3 |
BDX27-6 |
PNP SILICON PLANAR TRANSISTORS |
Siemens |
| 4 |
BTW27-600R |
Thyristors |
SESCOSEM |
| 5 |
BTW27-600R |
Thiristor - normal series |
SESCOSEM |
| 6 |
BYV27-600 |
Ultra fast low-loss controlled avalanche rectifiers |
Philips |
| 7 |
BYV27-600 |
Ultra Fast Avalanche Sinterglass Diode |
Vishay |
| 8 |
BYW27-600 |
Silicon Rectifiers |
Diotec Elektronische |
| 9 |
BYW27-600 |
SILICON RECTIFIERS |
EIC discrete Semiconductors |
| 10 |
BYW27-600 |
600 V, 1 A glass passivated junction rectifier |
Fagor |
| 11 |
BYX27-600 |
Controlled Avalanche Rectifier Diode |
Philips |
| 12 |
FH27-60S-0.4SH |
0.4 mm Contact Pitch, 1.2 mm above the board, Flexible Printed Circuit ZIF Connectors |
Hirose Electric |
| 13 |
MRAL2327-6 |
Microwave Power Transistor 2.3-2.7GHz |
Motorola |
| 14 |
OT127-609 |
A.C. controlled thyristors stacks, single-phase |
Mullard |
| | | |
