| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0663002.HXLL |
LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating 2.00, voltage rating 250, nominal resistance cold ohms 27. |
Littelfuse |
| 2 |
0663002.HXSL |
LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating 2.00, voltage rating 250, nominal resistance cold ohms 27. |
Littelfuse |
| 3 |
0663002.ZRLL |
LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating 2.00, voltage rating 250, nominal resistance cold ohms 27. |
Littelfuse |
| 4 |
1.5KE500A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=427.5V, Tolerance=5% |
Comchip Technology |
| 5 |
1.5KE500A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=427.5V, Tolerance=5% |
Comchip Technology |
| 6 |
1.5KE500CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=427.5V, Tolerance=5% |
Comchip Technology |
| 7 |
1.5KE500CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=427.5V, Tolerance=5% |
Comchip Technology |
| 8 |
1N1327 |
150mW Zener diode 127.5V |
Motorola |
| 9 |
1N1327A |
150mW Zener diode 127.5V |
Motorola |
| 10 |
1N4750 |
27.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 11 |
1N4750 |
1 W silicon zener diode. Nominal zener voltage 27.0 V. |
Fairchild Semiconductor |
| 12 |
1N4750A |
27.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 13 |
1N5254 |
500 mW silicon zener diode. Nominal zener voltage 27.0 V. |
Fairchild Semiconductor |
| 14 |
1N5254B |
27.0V 500 mW Zener Diode |
Continental Device India Limited |
| 15 |
1N5746B |
27.0V Voltage Reference Diode |
Philips |
| 16 |
1N6095 |
V(rwm): 30V; 27.5A dual schottky power rectifier |
International Rectifier |
| 17 |
1N6096 |
V(rwm): 40V; 27.5A dual schottky power rectifier |
International Rectifier |
| 18 |
1N6119 |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 19 |
1N6119A |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin |
New Jersey Semiconductor |
| 20 |
1N6119C |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 21 |
1N6119CA |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD |
New Jersey Semiconductor |
| 22 |
1N6155 |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 23 |
1N6155A |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 24 |
1N6155AUS |
Diode TVS Single Bi-Dir 27.4V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 25 |
1N971 |
27.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 26 |
1N971 |
500 mW silicon planar zener diode. Max zener voltage 27.0 V. |
Fairchild Semiconductor |
| 27 |
1N971A |
27.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 28 |
1N971B |
27.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 29 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 30 |
2N7225 |
27.4A N-channel enhancement mode MOSFET power transistor |
Omnirel |
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