No. |
Part Name |
Description |
Manufacturer |
1 |
2N2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
2 |
2N2716 |
Silicon NPN Transistor |
Motorola |
3 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
4 |
AM2716B |
(AM2732B) 2048 x 8 Bit EPROM |
Advanced Micro Devices |
5 |
APE12716 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
6 |
BC32716 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
7 |
BC32716BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
8 |
BC32716TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
9 |
BC32716TAR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10 |
BC32716TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11 |
BC32716TFR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12 |
BGA2716 |
MMIC wideband amplifier |
NXP Semiconductors |
13 |
BGA2716 |
BGA2716; MMIC wideband amplifier |
Philips |
14 |
BGA2716 |
BGA2716; MMIC wideband amplifier |
Philips |
15 |
BGA2716 |
MMIC wideband amplifier |
Philips |
16 |
CXP82716 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
17 |
D2716 |
(M2716) 16K UV Erasable PROM |
Intel |
18 |
D2716 |
(M2716) 16K UV Erasable PROM |
Intel |
19 |
DZ27160 |
Zener Diodes |
Panasonic |
20 |
DZ2716000L |
Zener Diodes |
Panasonic |
21 |
ETC2716 |
16K BIT CMOS UV ERASABLE PROM |
ST Microelectronics |
22 |
ETC2716Q |
16K BIT CMOS UV ERASABLE PROM |
ST Microelectronics |
23 |
HN462716 |
2048 word x 8 Bit UV Erasable and EPROM |
Hitachi Semiconductor |
24 |
HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
Hitachi Semiconductor |
25 |
HN462716G-1 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
26 |
HN462716G-2 |
2048-word x 8-bit U.V. Erasable and Electrically Programmable Read Only Memory |
Hitachi Semiconductor |
27 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
28 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
29 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
30 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| | | |