No. |
Part Name |
Description |
Manufacturer |
1 |
2N2869 |
Germanium PNP Transistor |
Motorola |
2 |
2SC2869 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
3 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
4 |
2SK2869 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
5 |
2SK2869(L) |
Power switching MOSFET |
Hitachi Semiconductor |
6 |
2SK2869(S) |
Power switching MOSFET |
Hitachi Semiconductor |
7 |
2SK2869L |
Transistors>Switching/MOSFETs |
Renesas |
8 |
2SK2869S |
Transistors>Switching/MOSFETs |
Renesas |
9 |
AAT2869 |
Fade-In/Fade-Out Four-Channel Backlight Driver with Dual LDOs |
Skyworks Solutions |
10 |
AAT2869IDT-T1 |
Fade-In/Fade-Out Four-Channel Backlight Driver with Dual LDOs |
Skyworks Solutions |
11 |
ASM3P2869A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
12 |
ASM3P2869A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
13 |
ASM3P2869A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
14 |
ASM3P2869A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
15 |
ASM3P2869A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
16 |
ASM3P2869AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
17 |
ASM3P2869AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
18 |
ASM3P2869AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
19 |
ASM3P2869AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
20 |
ASM3P2869AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
21 |
BGA2869 |
MMIC wideband amplifier |
NXP Semiconductors |
22 |
NB2869A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
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