| No. |
Part Name |
Description |
Manufacturer |
| 1 |
JBP28S42 |
512x8 Bi-Polar PROM |
Texas Instruments |
| 2 |
JBP28S42MJ |
512x8 Bi-Polar PROM |
Texas Instruments |
| 3 |
M2V28S40ATP |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 4 |
M2V28S40ATP-6 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 5 |
M2V28S40ATP-6L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 6 |
M2V28S40ATP-7 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 7 |
M2V28S40ATP-7L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 8 |
M2V28S40ATP-8 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 9 |
M2V28S40ATP-8L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 10 |
M2V28S40TP |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 11 |
M2V28S40TP-6 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 12 |
M2V28S40TP-7 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 13 |
M2V28S40TP-7L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 14 |
M2V28S40TP-8 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 15 |
M2V28S40TP-8L |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 16 |
MT28S4M16B1LC |
SYNCFLASH MEMORY |
Micron Technology |
| 17 |
MT28S4M16B1LL |
SYNCFLASH MEMORY |
Micron Technology |
| 18 |
MT28S4M16LC |
SYNCFLASH MEMORY |
Micron Technology |
| 19 |
P2V28S40ATP-7 |
128Mb SDRAM Specification |
Vanguard International Semiconductor |
| 20 |
P2V28S40ATP-75 |
128Mb SDRAM Specification |
Vanguard International Semiconductor |
| 21 |
P2V28S40ATP-8 |
128Mb SDRAM Specification |
Vanguard International Semiconductor |
| 22 |
W528S40 |
ADPCM Synthesizer w/ 4 triggers, STPA, STPB, STPC, R0 (40 seconds @7.6K) |
Winbond Electronics |
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