No. |
Part Name |
Description |
Manufacturer |
1 |
1N4129-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
2 |
1N4129-1 |
Zener Voltage Regulator Diode |
Microsemi |
3 |
1N829-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
4 |
1N829-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
5 |
2020-6629-10 |
12.4-18 GHz, directional couplers mini, octave bandwidth |
MA-Com |
6 |
2020-6629-10 |
Directional Couplers Mini, Octave Bandwidth |
Tyco Electronics |
7 |
2023-6129-20 |
2.6-5.2 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
8 |
2023-6129-20 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
9 |
2729-125 |
Pulsed Power S-Band (Si) |
Microsemi |
10 |
2729-170 |
Pulsed Power S-Band (Si) |
Microsemi |
11 |
2729-300P |
Pulsed Power S-Band (Si) |
Microsemi |
12 |
29-04 |
Case dimensions |
Motorola |
13 |
29-04 |
Motorola case, dimensions, similar with TO-226AA |
Motorola |
14 |
29-04 |
CASE DIMENSIONS |
Motorola |
15 |
2N5208 |
CASE 29-04,STYLE 2 TO-92(TO-226AA) |
Motorola |
16 |
2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) |
Motorola |
17 |
2SA1129-S |
Silicon transistor |
NEC |
18 |
2SA1129-Z |
Silicon transistor |
NEC |
19 |
2SA2029-Q |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
20 |
2SA2029-R |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
21 |
2SA2029-S |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
22 |
2SK2029-01L |
N-channel MOS-FET |
Fuji Electric |
23 |
2SK2029-01S |
N-channel MOS-FET |
Fuji Electric |
24 |
30129-13 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
25 |
429-02 |
CASE DIMENSIONS |
Motorola |
26 |
5962-9866102VXA |
Rad-Tolerant Class V, Floating Point Digital Signal Processor 429-CFCBGA -55 to 125 |
Texas Instruments |
27 |
5962-9866102VYC |
Rad-Tolerant Class V, Floating Point Digital Signal Processor 429-FCLGA -55 to 125 |
Texas Instruments |
28 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
29 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
30 |
8729-5 |
PROGRAMMABLE KEYBOARD / DISPLAY INTERFACE |
Intel |
| | | |