No. |
Part Name |
Description |
Manufacturer |
1 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
2 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
3 |
1N1292 |
Silicon Rectifier Diode |
Motorola |
4 |
1N2292 |
Rectifier Diode |
Motorola |
5 |
1N2292A |
Rectifier Diode |
Motorola |
6 |
1N292 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
7 |
1N292 |
Gold Bond Germanium Diode |
ITT Semiconductors |
8 |
1N292 |
Germanium Signal Diode |
Motorola |
9 |
1N2920 |
Signal Diode |
Motorola |
10 |
1N2921 |
Signal Diode |
Motorola |
11 |
1N2922 |
Signal Diode |
Motorola |
12 |
1N2923 |
Signal Diode |
Motorola |
13 |
1N2923 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
14 |
1N2924 |
Signal Diode |
Motorola |
15 |
1N2925 |
Signal Diode |
Motorola |
16 |
1N2926 |
Microwave X-K band Detector |
Motorola |
17 |
1N2926A |
Microwave X-K band Detector |
Motorola |
18 |
1N2927 |
GERMANIUM TUNNEL DIODE |
Advanced Semiconductor |
19 |
1N2927 |
Silicon Tunnel Diode |
Motorola |
20 |
1N2927 |
Diode 0.0005A 3-Pin TO-18 |
New Jersey Semiconductor |
21 |
1N2927A |
Silicon Tunnel Diode |
Motorola |
22 |
1N2928 |
Silicon Tunnel Diode |
Motorola |
23 |
1N2928 |
Diode 0.0025A 3-Pin TO-18 |
New Jersey Semiconductor |
24 |
1N2928A |
Silicon Tunnel Diode |
Motorola |
25 |
1N2928A |
Diode 0.0025A 3-Pin TO-18 |
New Jersey Semiconductor |
26 |
1N2929 |
Silicon Tunnel Diode |
Motorola |
27 |
1N2929 |
Diode 0.005A 3-Pin TO-18 |
New Jersey Semiconductor |
28 |
1N2929A |
Silicon Tunnel Diode |
Motorola |
29 |
1N2929A |
Diode 0.005A 3-Pin TO-18 |
New Jersey Semiconductor |
30 |
1N3292 |
500V 100A Std. Recovery Diode in a DO-205AA (DO-8)package |
International Rectifier |
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