| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2969 |
Germanium Tunnel Diode |
Motorola |
| 2 |
1N2969A |
Germanium Tunnel Diode |
Motorola |
| 3 |
2N2969 |
Silicon PNP Transistor |
Motorola |
| 4 |
2N2969 |
SPAT® PNP symmetrical silicon transistor |
Sprague |
| 5 |
2SK2969 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 6 |
ASM3P2969A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 7 |
ASM3P2969A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 8 |
ASM3P2969A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 9 |
ASM3P2969A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 10 |
ASM3P2969A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 11 |
ASM3P2969AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 12 |
ASM3P2969AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 13 |
ASM3P2969AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 14 |
ASM3P2969AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 15 |
ASM3P2969AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 16 |
E2969A |
Protocol Test Card for PCI Express |
Agilent (Hewlett-Packard) |
| 17 |
FN2969 |
CMOS Programmable Peripheral Interface |
Intersil |
| 18 |
MC74F2969 |
Dynamic Memory Timing Controller |
Motorola |
| 19 |
NB2969A |
Low Power, Reduced EMI Clock Synthesizer |
ON Semiconductor |
| 20 |
NTE2969 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 21 |
PJ2969 |
5 V, customer specific, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 22 |
PJA2969 |
3.3 V, customer specific, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 23 |
RN2969 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 24 |
RN2969FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 25 |
RN2969FS |
Bias resistor built-in transistor (BRT), 2-in-1 |
TOSHIBA |
| 26 |
SD2969 |
5 V, customer specific, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 27 |
SDA2969 |
3.3 V, customer specific, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 28 |
SDB2969 |
2.5 V, customer specific, differential positive ECL fast edge crystal clock oscillator |
NEL Frequency Controls |
| 29 |
SPX2969 |
150mA Low Dropout Voltage Regulator |
Sipex Corporation |
| 30 |
SPX2969S |
150mA Low Dropout Voltage Regulator |
Sipex Corporation |
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