| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AMD-K6-2E |
AMD-K6-2E Embedded Processor Data Sheet |
Advanced Micro Devices |
| 2 |
CRA12E AND S |
4, 8, 10, or 16 Terminal Package, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Choice of Isolated or Bussed Circuits |
Vishay |
| 3 |
CRCA12E & S |
Thick Film Array, Resistor / Capacitor, Choice of Dielectric Characteristics X7R or Y5U, Wrap around termination |
Vishay |
| 4 |
HDSP-B02E |
HDSP-B02E · 18:88 and 88:88 0.56" Four Digit GaP HER Seven Segment Display |
Agilent (Hewlett-Packard) |
| 5 |
HFBR-5912E |
HFBR-5912E · 1.25 Gbit/s MMF (500m) SFF MT-RJ Transceiver for Gigabit Ethernet (1000Base-SX) |
Agilent (Hewlett-Packard) |
| 6 |
HFCT-5912E |
HFCT-5912E · 1.25 Gbit/s SMF (10km) Small Form Factor Transceiver for Gigabit Ethernet (1000Base-LX) |
Agilent (Hewlett-Packard) |
| 7 |
HSMS-282E |
HSMS-282E · RF mixer/detector diode |
Agilent (Hewlett-Packard) |
| 8 |
K6F2008S2E FAMILY |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 9 |
K6F2008U2E FAMILY |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 10 |
K6F2008V2E FAMILY |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 11 |
K6T1008C2E FAMILY |
128K x 8 bit Low Power CMOS Static RAM Data Sheet |
Samsung Electronic |
| 12 |
K6T1008C2E FAMILY |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 13 |
K6T1008V(U)2E FAMILY |
128K x 8 bit Low Power and Low Voltage CMOS Static RAM Data Sheet |
Samsung Electronic |
| 14 |
SH-2E SH7055 F-ZTAT HD64F7055 |
Hitachi SuperH RISC engine Hardware Manual |
Hitachi Semiconductor |
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