| No. |
Part Name |
Description |
Manufacturer |
| 1 |
102G18BX18 |
Selenium Transient Voltage Suppressors, STUD types |
ITT Semiconductors |
| 2 |
EETEE2G181JJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) EE-TS |
Panasonic |
| 3 |
EETEE2G181KJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) EE-TS |
Panasonic |
| 4 |
EETHC2G181HJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 5 |
EETHC2G181JJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) HC-TS |
Panasonic |
| 6 |
HCGF6A2G183YF |
SCREW TERMINAL TYPE ALUMINUM ELECTROLYTIC CAPACITORS |
Hitachi Semiconductor |
| 7 |
HCGF6A2G183YG |
SCREW TERMINAL TYPE ALUMINUM ELECTROLYTIC CAPACITORS |
Hitachi Semiconductor |
| 8 |
HCGHA2G182Y |
SCREW TERMINAL TYPE ALUMINUM ELECTROLYTIC CAPACITORS |
Hitachi Semiconductor |
| 9 |
HM62G18512 |
8M Synchronous Fast Static RAM(512k-word x 18-bit) |
Hitachi Semiconductor |
| 10 |
HM62G18512ABP |
Synchronous SRAMS |
Hitachi Semiconductor |
| 11 |
HM62G18512ABP-30 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM |
Renesas |
| 12 |
HM62G18512ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM |
Renesas |
| 13 |
HM62G18512BP-4 |
8M Synchronous Fast Static RAM(512k-word x 18-bit) |
Hitachi Semiconductor |
| 14 |
HM62G18512BP-5 |
8M Synchronous Fast Static RAM(512k-word x 18-bit) |
Hitachi Semiconductor |
| 15 |
ST1S12G18R |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| | | |
