| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CDB42L50 |
Low Voltage/ Stereo CODEC with headphone Amp |
Cirrus Logic |
| 2 |
CMDZ2L5 |
SUPERmini. LOW LEVEL ZENER DIODE 250mW, 2.4 VOLTS THRU 36 VOLTS |
Central Semiconductor |
| 3 |
CMOZ2L5 |
ULTRAmini. LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE |
Central Semiconductor |
| 4 |
CS42L50 |
Low Voltage/ Stereo CODEC with headphone Amp |
Cirrus Logic |
| 5 |
CS42L50-KN |
Low Voltage/ Stereo CODEC with headphone Amp |
Cirrus Logic |
| 6 |
DY2L5A0C |
TVS Diodes |
Panasonic |
| 7 |
DY2L5A0C0L |
TVS Diodes |
Panasonic |
| 8 |
FBI2L5S2 |
2. Amp. Glass Passivated Bridge Rectifier |
Fagor |
| 9 |
IDT72132L50P |
2K x 9 Serial-to-Parallel FIFO, 5.0V |
IDT |
| 10 |
IDT72142L50P |
4K x 9 Serial-to-Parallel FIFO, 5.0V |
IDT |
| 11 |
IDT72T54242L5BB |
32K x 10 x 4 / 32K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V |
IDT |
| 12 |
IDT72T54252L5BB |
64K x 10 x 4 / 64K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V |
IDT |
| 13 |
IDT72T54262L5BB |
128K x 10 x 4 / 128K x 10 x 2 Quad/Dual TeraSync DDR/SDR FIFO, 2.5V |
IDT |
| 14 |
KT832L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 15 |
KT832L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 16 |
KT842L51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 17 |
KT842L55 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 18 |
KT862L51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 |
Optek Technology |
| 19 |
KT862L55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
| 20 |
KT872L51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
| 21 |
KT872L55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
| 22 |
M312L5628BT0-A2 |
DDR SDRAM Registered Module |
Samsung Electronic |
| 23 |
M312L5628BT0-CAA |
DDR SDRAM Registered Module |
Samsung Electronic |
| 24 |
M312L5628MT0 |
M312L5628MT0 DDR SDRAM 184pin DIMM 256Mx72 DDR SDRAM Data Sheet |
Samsung Electronic |
| 25 |
M312L5628MT0 |
M312L5628MT0 DDR SDRAM 184pin DIMM 256Mx72 DDR SDRAM Data Sheet |
Samsung Electronic |
| 26 |
M312L5720BG0-A2 |
DDR SDRAM Registered Module |
Samsung Electronic |
| 27 |
M312L5720BG0-B0 |
DDR SDRAM Registered Module |
Samsung Electronic |
| 28 |
M312L5720BG0-CB3 |
DDR SDRAM Registered Module |
Samsung Electronic |
| 29 |
MCM32L512 |
512K x 32 Bit Dynamic Random Access Memory Module |
Motorola |
| 30 |
MCM32L512S10 |
512K x 32 Bit Dynamic Random Access Memory Module |
Motorola |
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