No. |
Part Name |
Description |
Manufacturer |
1 |
HY5DU121622CTP |
512Mb(32Mx16) GDDR SDRAM |
Hynix Semiconductor |
2 |
HY5DU121622CTP-4 |
512Mb(32Mx16) GDDR SDRAM |
Hynix Semiconductor |
3 |
HY5DU121622CTP-5 |
512Mb(32Mx16) GDDR SDRAM |
Hynix Semiconductor |
4 |
HY5DU121622CTP-6 |
512Mb(32Mx16) GDDR SDRAM |
Hynix Semiconductor |
5 |
HYB18T512160AC-3.7 |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04 |
Infineon |
6 |
HYB18T512160AC-5 |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04 |
Infineon |
7 |
HYB25D512160AT-6 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) |
Infineon |
8 |
HYB25D512160AT-7 |
DDR SDRAM Components - 512Mb (32Mx16) DDR266A (2-3-3) |
Infineon |
9 |
HYB25D512160BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) |
Infineon |
10 |
HYB25D512160BE-6 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) |
Infineon |
11 |
HYB25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3 |
Infineon |
12 |
HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04 |
Infineon |
13 |
HYE18P32161AC-70 |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04 |
Infineon |
14 |
HYE18P32161AC-85 |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04 |
Infineon |
15 |
HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp. |
Infineon |
16 |
HYR163240G-845 |
RDRAM� Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued |
Infineon |
17 |
HYR163249G-845 |
RDRAM� Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued |
Infineon |
18 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
19 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
20 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
21 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
22 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
23 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
24 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
25 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
26 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
27 |
K3N6C1000E-GC,TC,YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
28 |
K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
29 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
30 |
K3N6V(U)1000E-GC/TC/YC |
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
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