| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3583 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 2 |
2N3583 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3 |
2N3583 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
| 4 |
2N3583 |
NPN Transistor |
Microsemi |
| 5 |
2N3583 |
POWER TRANSISTORS(35W) |
MOSPEC Semiconductor |
| 6 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 7 |
2N3583 |
Silicon NPN Transistor |
Motorola |
| 8 |
2N3583 |
Trans GP BJT NPN 175V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 9 |
2N3583 |
NPN Power Transistor Triple Diffused - Fast switching |
SESCOSEM |
| 10 |
2N3583 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement 2N6211 |
Silicon Transistor Corporation |
| 11 |
2N6211 |
Silicon PNP Power Transistor, TO-66 package, NPN Complement 2N3583 |
Silicon Transistor Corporation |
| 12 |
MJ3583 |
For specification, see 2N3583 data |
Motorola |
| 13 |
MJ3584 |
For specification, see 2N3583 data |
Motorola |
| 14 |
MJ3585 |
For specification, see 2N3583 data |
Motorola |
| | | |
