| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N4125 |
General Purpose PNP Transistor |
CCSIT-CE |
| 2 |
2N4125 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3 |
2N4125 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 4 |
2N4125 |
Low Noise PNP Transistor |
FERRANTI |
| 5 |
2N4125 |
Switching PNP transistor |
FERRANTI |
| 6 |
2N4125 |
General purpose PNP transistor |
FERRANTI |
| 7 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 8 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 9 |
2N4125 |
PNP silicon transistor |
Motorola |
| 10 |
2N4125 |
Silicon PNP Transistor |
Motorola |
| 11 |
2N4125 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 12 |
2N4125 |
PNP Silicon Transistor |
NEC |
| 13 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 14 |
2N4125 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 15 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 16 |
2N4125BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 17 |
2N4125TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 18 |
2N4125TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 19 |
2N4125TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 20 |
2N4125TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| | | |
