| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5089 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 3 |
2N5089 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 4 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 5 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 6 |
2N5089 |
Silicon NPN Transistor |
Motorola |
| 7 |
2N5089 |
NPN Transistor - Low level AMPS |
National Semiconductor |
| 8 |
2N5089 |
Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 9 |
2N5089 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 10 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 11 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 12 |
2N5089BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 13 |
2N5089RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 14 |
2N5089RLRE |
Small Signal Amplifier NPN |
ON Semiconductor |
| 15 |
2N5089TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 16 |
2N5089TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 17 |
2N5089TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 18 |
2N5089TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 19 |
2N5089_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 20 |
H2N5089 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| | | |
