| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5210 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 2 |
2N5210 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 3 |
2N5210 |
Low Noise NPN Transistor |
FERRANTI |
| 4 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 5 |
2N5210 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 6 |
2N5210 |
NPN silicon annular transistor |
Motorola |
| 7 |
2N5210 |
Silicon NPN Transistor |
Motorola |
| 8 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 9 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 10 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 11 |
2N5210BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 12 |
2N5210NMBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 13 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 14 |
2N5210TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 15 |
2N5210TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 16 |
2N5210TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 17 |
2N5210TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 18 |
2N5210_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 19 |
2N5210_J05Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| | | |
