| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5630 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
| 2 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 3 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 4 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 5 |
2N5630 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 6 |
2N5630 |
Bipolar NPN Device |
SemeLAB |
| 7 |
SF_2N5630 |
Bipolar NPN Device |
SemeLAB |
| | | |
