No. |
Part Name |
Description |
Manufacturer |
1 |
2N567 |
Germanium PNP Transistor |
Motorola |
2 |
2N5670 |
Silicon N-Channel Junction Field-Effect Transistor |
Motorola |
3 |
2N5670 |
JFET VHF Amplifier N-Channel - DEPLETION |
Motorola |
4 |
2N5670 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
5 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
6 |
2N5671 |
NPN Transistor |
Microsemi |
7 |
2N5671 |
POWER TRANSISTORS(30A,140W) |
MOSPEC Semiconductor |
8 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
9 |
2N5671 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
10 |
2N5671 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
11 |
2N5671 |
Silicon multiepitaxial planar NPN transistor |
SGS-ATES |
12 |
2N5671 |
Silicon power transistor |
SGS-ATES |
13 |
2N5671 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
14 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
15 |
2N5672 |
NPN Transistor |
Microsemi |
16 |
2N5672 |
POWER TRANSISTORS(30A,140W) |
MOSPEC Semiconductor |
17 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
18 |
2N5672 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
19 |
2N5672 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
20 |
2N5672 |
Silicon multiepitaxial planar NPN transistor |
SGS-ATES |
21 |
2N5672 |
Silicon power transistor |
SGS-ATES |
22 |
2N5672 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
23 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
24 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
25 |
2N5675 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
26 |
2N5676 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
27 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
28 |
2N5679 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
29 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
30 |
2N5679 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| | | |