| No. |
Part Name |
Description |
Manufacturer |
| 1 |
H02N60E |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
| 2 |
HGTA32N60E2 |
32A/ 600V N-Channel IGBT |
Intersil |
| 3 |
HGTG32N60E2 |
32A/ 600V N-Channel IGBT |
Intersil |
| 4 |
MTB2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS |
Motorola |
| 5 |
MTB2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 6 |
MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 7 |
MTP2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
| 8 |
MTP2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 9 |
MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 10 |
PHB2N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 11 |
PHD2N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 12 |
PHP2N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 13 |
PHX2N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| | | |
