| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 2 |
2N6288 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 3 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 4 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
| 5 |
2N6288 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
| 6 |
2N6288 |
7A complementary silicon plastic 65W power NPN transistor |
Motorola |
| 7 |
2N6288 |
Power 7A 30V Discrete NPN |
ON Semiconductor |
| 8 |
2N6288 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| | | |
