No. |
Part Name |
Description |
Manufacturer |
1 |
2N66 |
PNP Transistor |
Motorola |
2 |
2N660 |
SCRs |
Central Semiconductor |
3 |
2N660 |
Germanium PNP Transistor |
Motorola |
4 |
2N660 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
5 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
6 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
7 |
2N6605 |
Leaded Thyristor SCR |
Central Semiconductor |
8 |
2N6606 |
Leaded Thyristor SCR |
Central Semiconductor |
9 |
2N6607 |
Leaded Thyristor SCR |
Central Semiconductor |
10 |
2N6608 |
Leaded Thyristor SCR |
Central Semiconductor |
11 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
12 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
13 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
14 |
2N6609 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
15 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
16 |
2N6609 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
17 |
2N6609 |
Power 16A 140V Discrete PNP |
ON Semiconductor |
18 |
2N661 |
Germanium PNP Transistor |
Motorola |
19 |
2N661 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
20 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
21 |
2N662 |
Germanium PNP Transistor |
Motorola |
22 |
2N662 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
23 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
24 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
25 |
2N663 |
Germanium PNP Transistor |
Motorola |
26 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
27 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
28 |
2N6648 |
PNP Darlington Transistor |
Microsemi |
29 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
30 |
2N6648 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
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