No. |
Part Name |
Description |
Manufacturer |
1 |
2N660 |
SCRs |
Central Semiconductor |
2 |
2N660 |
Germanium PNP Transistor |
Motorola |
3 |
2N660 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
4 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
5 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
6 |
2N6605 |
Leaded Thyristor SCR |
Central Semiconductor |
7 |
2N6606 |
Leaded Thyristor SCR |
Central Semiconductor |
8 |
2N6607 |
Leaded Thyristor SCR |
Central Semiconductor |
9 |
2N6608 |
Leaded Thyristor SCR |
Central Semiconductor |
10 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
11 |
2N6609 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
12 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
13 |
2N6609 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
14 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
15 |
2N6609 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
16 |
2N6609 |
Power 16A 140V Discrete PNP |
ON Semiconductor |
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