No. |
Part Name |
Description |
Manufacturer |
1 |
2N675 |
Germanium PNP Transistor |
Motorola |
2 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
3 |
2N6751 |
Trans GP BJT NPN 400V 10A |
New Jersey Semiconductor |
4 |
2N6751 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
5 |
2N6751 |
Bipolar NPN Device |
SemeLAB |
6 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
7 |
2N6752 |
Trans GP BJT NPN 450V 10A |
New Jersey Semiconductor |
8 |
2N6752 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
9 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
10 |
2N6753 |
Trans GP BJT NPN 500V 10A |
New Jersey Semiconductor |
11 |
2N6753 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
12 |
2N6753 |
Bipolar NPN Device |
SemeLAB |
13 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
14 |
2N6754 |
Trans GP BJT NPN 500V 10A |
New Jersey Semiconductor |
15 |
2N6754 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
16 |
2N6754 |
Bipolar NPN Device |
SemeLAB |
17 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
18 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
19 |
2N6755 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
20 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
21 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
22 |
2N6756 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
23 |
2N6756 |
N-Channel |
Microsemi |
24 |
2N6756 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
25 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
26 |
2N6756E3 |
N-Channel |
Microsemi |
27 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
28 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
29 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
30 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
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