| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 2 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 3 |
2N6760 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 4 |
2N6760 |
N-Channel |
Microsemi |
| 5 |
2N6760E3 |
N-Channel |
Microsemi |
| 6 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 7 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 8 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 9 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 10 |
2N6762 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 11 |
2N6762 |
N-Channel |
Microsemi |
| 12 |
2N6762E3 |
N-Channel |
Microsemi |
| 13 |
2N6763 |
N-Channel Power MOSFETs/ 38A/ 60V/100V |
Fairchild Semiconductor |
| 14 |
2N6763 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 15 |
2N6764 |
N-Channel Power MOSFETs/ 38A/ 60V/100V |
Fairchild Semiconductor |
| 16 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 17 |
2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 18 |
2N6764 |
N-Channel |
Microsemi |
| 19 |
2N6764 |
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 20 |
2N6764 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 21 |
2N6764E3 |
N-Channel |
Microsemi |
| 22 |
2N6764T1 |
N-Channel |
Microsemi |
| 23 |
2N6764T1E3 |
N-Channel |
Microsemi |
| 24 |
2N6765 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 25 |
2N6765 |
FET DEVICES WITH N_CHANNEL POLARITY |
New Jersey Semiconductor |
| 26 |
2N6766 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 27 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 28 |
2N6766 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 29 |
2N6766 |
N-Channel |
Microsemi |
| 30 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
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