| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC5192R-T1 |
Low-voltage drive, high-frequency transistor |
NEC |
| 2 |
2SC5192R-T2 |
Low-voltage drive, high-frequency transistor |
NEC |
| 3 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 4 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 5 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 6 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 7 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 8 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 9 |
CAT24WC02R-TE13C |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 10 |
CAT24WC02R-TE13F |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
| 11 |
CE1N2R-T |
Hybrid transistor |
NEC |
| 12 |
HSMS-282R-TR1 |
Surface Mount RF Schottky Barrier Diodes |
Agilent (Hewlett-Packard) |
| 13 |
HSMS-282R-TR2 |
Surface Mount RF Schottky Barrier Diodes |
Agilent (Hewlett-Packard) |
| 14 |
S-812C37AMC-C2R-T2 |
HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR |
Seiko Instruments Inc |
| 15 |
S-812C37AUA-C2R-T2 |
HIGH OPERATING VOLTAGE CMOS VOLTAGE REGULATOR |
Seiko Instruments Inc |
| 16 |
SI1032R-T1 |
N-Channel 20-V (D-S) MOSFET |
Vishay |
| 17 |
TOP242R-TL |
0,72A Extended power, design elexible, integrated off-line switcher |
Power Integrations Inc |
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