| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA101 |
Ge PNP Drift |
Unknow |
| 2 |
2SA1010 |
SILICON POWER TRANSISTOR |
NEC |
| 3 |
2SA1010 |
Trans GP BJT PNP 100V 7A 3-Pin(3+Tab) MP-25 |
New Jersey Semiconductor |
| 4 |
2SA1010 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 5 |
2SA1010(1) |
Silicon transistor |
NEC |
| 6 |
2SA1010(2) |
Silicon transistor |
NEC |
| 7 |
2SA1011 |
POWER TRANSISTORS(1.5A,160V,25W) |
MOSPEC Semiconductor |
| 8 |
2SA1011 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 9 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 10 |
2SA1011 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 11 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 12 |
2SA1012 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 13 |
2SA1012 |
POWER TRANSISTORS(5A,50V,25W) |
MOSPEC Semiconductor |
| 14 |
2SA1012 |
Trans GP BJT PNP 50V 5A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 15 |
2SA1012 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 16 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 17 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 18 |
2SA1013-O |
TO-92MOD Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 19 |
2SA1013-R |
TO-92MOD Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 20 |
2SA1013-Y |
TO-92MOD Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 21 |
2SA1015 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 22 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 23 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 24 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 25 |
2SA1015-GR |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 26 |
2SA1015-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 27 |
2SA1015-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 28 |
2SA1015GR |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 29 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 30 |
2SA1015Y |
400mW PNP silicon transistor |
Micro Electronics |
| | | |
