| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA1015 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 2 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 3 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 4 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 5 |
2SA1015-GR |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SA1015-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SA1015-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
2SA1015GR |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 9 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 10 |
2SA1015Y |
400mW PNP silicon transistor |
Micro Electronics |
| 11 |
UTC2SA1015 |
PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| | | |
