| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA53 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 2 |
2SA53 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 3 |
2SA53 |
Germanium PNP alloy junction transistor |
TOSHIBA |
| 4 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 5 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 6 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 7 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 8 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 9 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
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