| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 2 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 3 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 4 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 5 |
2SA661 |
Silicon PNP epitaxial planar transistor, complementary to 2SC1166 |
TOSHIBA |
| 6 |
2SB977 |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
| 7 |
2SB977A |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
| 8 |
2SC1000 |
Audio Frequency Transistor |
TOSHIBA |
| 9 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 10 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 11 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
| 12 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
| 13 |
2SC1004 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 14 |
2SC1004 |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
| 15 |
2SC1004A |
Audio Frequency Transistor |
TOSHIBA |
| 16 |
2SC1004A |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
| 17 |
2SC1008 |
TRANSISTOR NPN |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
| 18 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 19 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 20 |
2SC1008-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 21 |
2SC1008-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 22 |
2SC1008-R |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 23 |
2SC1008-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 24 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 25 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 26 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 27 |
2SC1009A-L |
Silicon transistor |
NEC |
| 28 |
2SC1009A-T1B |
Silicon transistor |
NEC |
| 29 |
2SC1009A-T2B |
Silicon transistor |
NEC |
| 30 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| | | |
