No. |
Part Name |
Description |
Manufacturer |
1 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
2 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
3 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
4 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
5 |
2SC3582-T |
For amplify microwave and low noise. |
NEC |
6 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
7 |
2SC3583-L |
For amplify microwave and low noise. |
NEC |
8 |
2SC3583-T1B |
For amplify microwave and low noise. |
NEC |
9 |
2SC3583-T2B |
For amplify microwave and low noise. |
NEC |
10 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
NEC |
11 |
2SC3585-L |
For amplify microwave and low noise. |
NEC |
12 |
2SC3585-T1B |
For amplify microwave and low noise. |
NEC |
13 |
2SC3585-T2B |
For amplify microwave and low noise. |
NEC |
14 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
15 |
2SC3588 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
16 |
2SC3588-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
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