| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 2 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 4 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
| 5 |
2SC3673 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
| 6 |
2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 7 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 8 |
2SC3678 |
Silicon NPN Transistor |
Sanken |
| 9 |
2SC3678 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 10 |
2SC3679 |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
Sanken |
| 11 |
2SC3679 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 12 |
2SC367G |
Industrial Transistor Specification Table |
TOSHIBA |
| 13 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
| | | |
