| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 2 |
2SC548 |
Industrial Transistor Specification Table |
TOSHIBA |
| 3 |
2SC5480 |
Silicon NPN Triple Diffused Horizntal Deflection Output |
Hitachi Semiconductor |
| 4 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 5 |
2SC5484 |
SILICON NPN TRANSISTOR |
Isahaya Electronics Corporation |
| 6 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 7 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 8 |
2SC5488 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| 9 |
2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP |
ON Semiconductor |
| 10 |
2SC5489 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications |
SANYO |
| | | |
