| No. |
Part Name |
Description |
Manufacturer |
| 1 |
22V10 |
HighPerformanceE2CMOSPLDGenericArrayLogic |
Lattice Semiconductor |
| 2 |
2V115 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 3 |
2V130 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 4 |
2V150 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 5 |
ABT22V10A5 |
5V high-speed universal PLD device with live insertion capability |
Philips |
| 6 |
ABT22V10A5A |
5V high-speed universal PLD device with live insertion capability |
Philips |
| 7 |
ABT22V10A7A |
5V high-speed universal PLD device with live insertion capability |
Philips |
| 8 |
ADC12V170 |
12-Bit, 170 MSPS, 1.1 GHz Bandwidth A/D Converter with LVDS Outputs |
Texas Instruments |
| 9 |
ADC12V170CISQ/NOPB |
12-Bit, 170 MSPS, 1.1 GHz Bandwidth A/D Converter with LVDS Outputs 48-WQFN -40 to 85 |
Texas Instruments |
| 10 |
AMPAL22V10 |
PAL22V10 Family/ AmPAL22V10/A 24-Pin TTL Versatile PAL Device |
Advanced Micro Devices |
| 11 |
AMPAL22V10 |
PAL22V10 Family/ AmPAL22V10/A 24-Pin TTL Versatile PAL Device |
Advanced Micro Devices |
| 12 |
AMPAL22V10 |
PAL22V10 Family/ AmPAL22V10/A 24-Pin TTL Versatile PAL Device |
Advanced Micro Devices |
| 13 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 14 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 15 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 16 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 17 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 18 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 19 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 20 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 21 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 22 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 23 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 24 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 25 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 26 |
ATF22V10 |
High- Performance EE PLD |
Atmel |
| 27 |
ATF22V10 |
High Performance E2 PLD |
Atmel |
| 28 |
ATF22V10B |
500 gate electrically erasable PLD, 24 and 28 pins, 5V |
Atmel |
| 29 |
ATF22V10B-10GM/883 |
High- Performance EE PLD |
Atmel |
| 30 |
ATF22V10B-10JC |
High- Performance EE PLD |
Atmel |
| | | |
