| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5271A |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
| 2 |
1N5271C |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
| 3 |
1N5271D |
100 V, 1.3 mA, zener diode |
Leshan Radio Company |
| 4 |
1N5942 |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N5942A |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N5942C |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5942D |
1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 12 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 13 |
3EZ120D |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 14 |
3EZ120D1 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 15 |
3EZ120D10 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 16 |
3EZ120D2 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 17 |
3EZ120D3 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 18 |
3EZ120D4 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19 |
3EZ140D |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 20 |
3EZ140D1 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 21 |
3EZ140D10 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 22 |
3EZ140D2 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 23 |
3EZ140D3 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 24 |
3EZ140D4 |
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 25 |
54195DM |
63 mA; universal 4-bit shift register |
National Semiconductor |
| 26 |
54195FM |
63 mA; universal 4-bit shift register |
National Semiconductor |
| 27 |
74195DC |
63 mA; universal 4-bit shift register |
National Semiconductor |
| 28 |
74195DM |
63 mA; universal 4-bit shift register |
National Semiconductor |
| 29 |
74195FC |
63 mA; universal 4-bit shift register |
National Semiconductor |
| 30 |
AA113 |
Tungsten point contact germanium diode - detection, 2AA113 matched pair of AA113 |
SESCOSEM |
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