| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1513-2.5A |
Delay 2.5 +/-1 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 3 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 4 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 5 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 6 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 7 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 9 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 10 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 11 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 12 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 15 |
AS1117M3-2.5V |
800mA low dropout regulator 2,5V |
ALPHA Semiconductor |
| 16 |
AS1117M3-2.85V |
800mA low dropout regulator 2,85V |
ALPHA Semiconductor |
| 17 |
B4250CK3-2.0 |
2.0V 250mA CMOS low dropout LDO |
BayLinear |
| 18 |
B4250CK3-2.1 |
2.1V 250mA CMOS low dropout LDO |
BayLinear |
| 19 |
B4250CK3-2.2 |
2.2V 250mA CMOS low dropout LDO |
BayLinear |
| 20 |
B4250CK3-2.3 |
2.3V 250mA CMOS low dropout LDO |
BayLinear |
| 21 |
B4250CK3-2.4 |
2.4V 250mA CMOS low dropout LDO |
BayLinear |
| 22 |
B4250CK3-2.5 |
2.5V 250mA CMOS low dropout LDO |
BayLinear |
| 23 |
B4250CK3-2.6 |
2.6V 250mA CMOS low dropout LDO |
BayLinear |
| 24 |
B4250CK3-2.7 |
2.7V 250mA CMOS low dropout LDO |
BayLinear |
| 25 |
B4250CK3-2.8 |
2.8V 250mA CMOS low dropout LDO |
BayLinear |
| 26 |
B4250CK3-2.9 |
2.9V 250mA CMOS low dropout LDO |
BayLinear |
| 27 |
LM385M3-2.5 |
Micropower Voltage Reference Diode |
National Semiconductor |
| 28 |
LM385M3-2.5 |
Micropower Voltage Reference Diode 3-SOT-23 0 to 70 |
Texas Instruments |
| 29 |
LM385M3-2.5/NOPB |
Micropower Voltage Reference Diode 3-SOT-23 0 to 70 |
Texas Instruments |
| 30 |
LM4040AEM3-2.1 |
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages |
MAXIM - Dallas Semiconductor |
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