| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE150CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 143.0 V(min), 158.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE170 |
Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1.5KE170C |
Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1.5KE250CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 237.0 V(min), 263.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
1.5KE350CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 333.0 V(min), 368.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 6 |
15KP120A |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 7 |
15KP120CA |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
| 8 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N4619UR-1 |
3.0 volt zener diode |
Compensated Devices Incorporated |
| 12 |
1N4743 |
1 W silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
| 13 |
1N4752 |
1 W silicon zener diode. Nominal zener voltage 33.0 V. |
Fairchild Semiconductor |
| 14 |
1N5225A |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
| 15 |
1N5225AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-10%. |
Microsemi |
| 16 |
1N5225BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-5%. |
Microsemi |
| 17 |
1N5225C |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
| 18 |
1N5225D |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
| 19 |
1N5225UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. |
Microsemi |
| 20 |
1N5243 |
500 mW silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
| 21 |
1N5257 |
500 mW silicon zener diode. Nominal zener voltage 33.0 V. |
Fairchild Semiconductor |
| 22 |
1N5533A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N5533B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N5546A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 25 |
1N5546B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 26 |
1N964 |
500 mW silicon planar zener diode. Max zener voltage 13.0 V. |
Fairchild Semiconductor |
| 27 |
1N973 |
500 mW silicon planar zener diode. Max zener voltage 33.0 V. |
Fairchild Semiconductor |
| 28 |
3229 |
T-1 subminiature, bi-pin lamp. 3.0 volts, 0.015 amps. |
Gilway Technical Lamp |
| 29 |
375 |
T-1 3/4 subminiature, miniature flanged lamp. 3.0 volts, 0.015 amps. |
Gilway Technical Lamp |
| 30 |
390 |
T-1 3/4 subminiature, miniature grooved lamp. 3.0 volts, 0.015 amps. |
Gilway Technical Lamp |
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