No. |
Part Name |
Description |
Manufacturer |
1 |
1N4620C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
2 |
1N4684C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
3 |
1N4728C |
Diode Zener Single 3.3V 2% 1W 2-Pin DO-41 |
New Jersey Semiconductor |
4 |
1N5008 |
Zener Diode 3.3V 2.5W |
Motorola |
5 |
1N5008A |
Zener Diode 3.3V 2.5W |
Motorola |
6 |
1N5226C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
7 |
1N5333 |
Diode Zener Single 3.3V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
8 |
1N5333C |
Diode Zener Single 3.3V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
9 |
1N5518 |
Diode Zener Single 3.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
10 |
1N5518C |
Diode Zener Single 3.3V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
11 |
1N5913 |
Diode Zener Single 3.3V 20% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
12 |
1N5913C |
Diode Zener Single 3.3V 2% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
13 |
1N5988 |
Diode Zener Single 3.3V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
14 |
1N5988C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
15 |
1N746C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
16 |
74ALVT162821DGG |
2.5V/3.3V 20-bit bus-interface D-type flip-flop; positive-edge trigger with 30ohm termination resistors 3-State |
Philips |
17 |
74ALVT162821DL |
2.5V/3.3V 20-bit bus-interface D-type flip-flop; positive-edge trigger with 30ohm termination resistors 3-State |
Philips |
18 |
AMD K6 |
3.3V 233MHz AMD K6 Processor Specifications |
Advanced Micro Devices |
19 |
AS4LC1M16S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
20 |
AS4LC256K16E0-35JC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
21 |
AS4LC256K16E0-35TC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
22 |
AS4LC256K16E0-45JC |
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time |
Alliance Semiconductor |
23 |
AS4LC256K16E0-45TC |
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time |
Alliance Semiconductor |
24 |
AS4LC256K16E0-60JC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
25 |
AS4LC256K16E0-60TC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
26 |
AS4LC256K16EO |
3.3V 256K x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
27 |
AS4LC2M8S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
28 |
AS6VA25616 |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
29 |
AS6VA25616-BC |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
30 |
AS6VA25616-BI |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
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