| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3822 |
Zener regulator diode. Nom zener voltage 3.6 V. 1 W. |
Motorola |
| 2 |
1N4621UR-1 |
3.6 volt zener diode |
Compensated Devices Incorporated |
| 3 |
1N4729 |
3.6 V, 1 W silicon zener diode |
BKC International Electronics |
| 4 |
1N4729 |
1 W silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 5 |
1N4729 |
1 WATT, 3.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 6 |
1N4729A |
3.6 V, 1 W silicon zener diode |
BKC International Electronics |
| 7 |
1N4729A |
Voltage regulator diode. Working voltage (nom) 3.6 V . |
Philips |
| 8 |
1N5227 |
500 mW silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 9 |
1N5227 |
500mW, 3.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 10 |
1N5227A |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 11 |
1N5227AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-10%. |
Microsemi |
| 12 |
1N5227BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-5%. |
Microsemi |
| 13 |
1N5227C |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 14 |
1N5227D |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 15 |
1N5227UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. |
Microsemi |
| 16 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 18 |
1N5913 |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 19 |
1N5913A |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N5913C |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N5913D |
1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N747 |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 23 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 24 |
1N747 |
400mW, 3.6 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 25 |
1N747A |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 26 |
1N747A |
500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N747B |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 28 |
1N747C |
500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N747C |
3.6 V, 20 mA, zener diode |
Leshan Radio Company |
| 30 |
1N747D |
500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
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