No. |
Part Name |
Description |
Manufacturer |
1 |
0581B |
14-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE |
Philips |
2 |
1N4600 |
Microwave Mixer f=13,300 MHz, NF=9.5 dB |
Motorola |
3 |
1N4601 |
Microwave Mixer f=13,300 MHz, NF=8.8 dB |
Motorola |
4 |
1N4602 |
Microwave Mixer f=13,300 MHz, NF=8.0 dB |
Motorola |
5 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
6 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
7 |
2302 |
2.0 Watt - 20 Volts, Class C Microwave 2300 MHz |
GHz Technology |
8 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
9 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
10 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
11 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
12 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
13 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
14 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
15 |
2722 162 02191 |
Circulators/Isolators 1700 to 2300 MHz |
Philips |
16 |
2722 162 02511 |
Circulators/Isolators 1700 to 2300 MHz |
Philips |
17 |
2722 162 02591 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
18 |
2722 162 02601 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
19 |
2722 162 03941 |
Circulators/Isolators 1700 to 2300 MHz |
Philips |
20 |
2722 162 03951 |
Circulators/Isolators 1700 to 2300 MHz |
Philips |
21 |
2722 162 05261 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
22 |
2722 162 05271 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
23 |
2722 162 05341 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
24 |
2722 162 05471 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
25 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
26 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
27 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
28 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
29 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
30 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
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