No. |
Part Name |
Description |
Manufacturer |
1 |
15KP170 |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
2 |
15KP170C |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
3 |
3D7304 SERIES |
MONOLITHIC QUADRUPLE FIXED DELAY LINE |
Data Delay Devices Inc |
4 |
82S212 |
2304 BIT BIPOLAR RAM |
Signetics |
5 |
AMT8304 |
The ANADIGICS AMT8304 is a 3.3V monolithically integrated Metal-Semiconductor-Metal (MSM) photodetector and transimpedance amplifier ... |
Anadigics Inc |
6 |
AN1456 |
STA304 + STA500 DIGITAL AUDIO PROCESSOR EVALUATION BOARD OPERATING MANUAL |
SGS Thomson Microelectronics |
7 |
CM1204 |
4-Channel ESD Protection Array in Chip Scale Package with OptiGuard Coating (CSPESD304 pin compatible) |
California Micro Devices Corp |
8 |
CM1204-04CP |
4-Channel ESD Protection Array in Chip Scale Package with OptiGuard Coating (CSPESD304 pin compatible) |
California Micro Devices Corp |
9 |
CM1204-04CS |
4-Channel ESD Protection Array in Chip Scale Package with OptiGuard Coating (CSPESD304 pin compatible) |
California Micro Devices Corp |
10 |
GM71C17400C |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
11 |
GM71C17400CJ |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
12 |
GM71C17400CJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
13 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
14 |
GM71C17400CJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
15 |
GM71C17400CLJ-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
16 |
GM71C17400CLJ-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
17 |
GM71C17400CLJ-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
18 |
GM71C17400CLT-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
19 |
GM71C17400CLT-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
20 |
GM71C17400CLT-7 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
21 |
GM71C17400CT-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
Hynix Semiconductor |
22 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
23 |
GM71C17400CT-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns |
Hynix Semiconductor |
24 |
GM71C17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
25 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
26 |
GM71C17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
27 |
GM71C17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
28 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
29 |
GM71C17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
30 |
GM71C17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
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