| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BU2530AL |
Silicon Diffused Power Transistor |
Philips |
| 2 |
BU2730AL |
Silicon Diffused Power Transistor |
Philips |
| 3 |
BU4530AL |
Silicon Diffused Power Transistor |
Philips |
| 4 |
CEB6030AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 5 |
CEP6030AL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 6 |
CS30AL |
High side current sense high voltage op amp |
ST Microelectronics |
| 7 |
IRF730AL |
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 8 |
IRF730AL |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 9 |
IRF730ALPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 10 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11 |
IRFBC30AL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12 |
LPR430AL |
MEMS motion sensor: dual-axis pitch and roll � 300 dps analog gyroscope |
ST Microelectronics |
| 13 |
LPR430ALTR |
MEMS motion sensor: dual-axis pitch and roll � 300 dps analog gyroscope |
ST Microelectronics |
| 14 |
LPY430AL |
MEMS motion sensor: dual-axis pitch and yaw � 300 dps analog gyroscope |
ST Microelectronics |
| 15 |
LPY430ALTR |
MEMS motion sensor: dual-axis pitch and yaw � 300 dps analog gyroscope |
ST Microelectronics |
| 16 |
LY330ALH |
MEMS motion sensor: high performance � 300 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 17 |
LY330ALHTR |
MEMS motion sensor: high performance � 300 dps analog yaw-rate gyroscope |
ST Microelectronics |
| 18 |
MAX16930ALS/VY+CM7 |
2MHz, 36V, Dual Buck with Preboost and 20µA Quiescent Current |
MAXIM - Dallas Semiconductor |
| 19 |
MAX16930ALS/VY+CM8 |
2MHz, 36V, Dual Buck with Preboost and 20µA Quiescent Current |
MAXIM - Dallas Semiconductor |
| 20 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 21 |
MRF18030ALR3 |
RF Power Field Effect Transistors |
Motorola |
| 22 |
MRF18030ALSR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 23 |
S-80730AL |
High-precision voltage detector |
Epson Company |
| 24 |
S-80730AL |
HIGH-PRECISION VOLTAGE DETECTOR |
Seiko Instruments Inc |
| 25 |
S-80730AL-AT-S |
High-precision voltage detector |
Epson Company |
| 26 |
S-80730AL-AT-T1 |
High-precision voltage detector |
Epson Company |
| 27 |
S-80730AL-AT-T2 |
High-precision voltage detector |
Epson Company |
| 28 |
S-80830ALNP-EAT-T2 |
Low-voltage high-precision voltage detector |
Epson Company |
| 29 |
SCT3030AL |
N-channel Silicon Carbide Power MOSFET |
ROHM |
| 30 |
SCT3030ALGC11 |
N-channel Silicon Carbide Power MOSFET |
ROHM |
| | | |
