No. |
Part Name |
Description |
Manufacturer |
1 |
1N2830BR |
50 Watt Silicon Zener Diode, TO-3 case, 50V reverse polarity, tolerance ±5% |
Transitron Electronic |
2 |
1N3330BR |
50 Watt Silicon Zener Diode, DO-5 case, 47V reverse polarity, tolerance ±5% |
Transitron Electronic |
3 |
1N5930BRL |
Zener 16V 3.0W 5% |
ON Semiconductor |
4 |
AD5330BRU |
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs |
Analog Devices |
5 |
AD5530BRU |
Serial Input, ±10 V Output Voltage Range, 12-Bit DAC |
Analog Devices |
6 |
AD7730BR |
Bridge Transducer ADC |
Analog Devices |
7 |
AD7730BRU |
Bridge Transducer ADC |
Analog Devices |
8 |
ADR430BR |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
Analog Devices |
9 |
ADR430BR-REEL7 |
Ultralow Noise XFET Voltage References with Current Sink and Source Capability |
Analog Devices |
10 |
ADR530BRT-R2 |
High Precision Shunt Mode Voltage References |
Analog Devices |
11 |
ADR530BRT-REEL7 |
High Precision Shunt Mode Voltage References |
Analog Devices |
12 |
CXD2930BR |
GPS LSI with Built-in 32-bit RISC CPU |
SONY |
13 |
FR30BR02 |
High Power Fast Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
14 |
IPL10030BR |
Shortform Catalogue |
etc |
15 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
16 |
MRF18030BR3 |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
17 |
TSL230BRP |
Programmable light-to-frequency converter |
TAOS |
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