No. |
Part Name |
Description |
Manufacturer |
1 |
HIF2C-30DT-1.27R |
Staggered Connector Directly Mounted on Board |
Hirose Electric |
2 |
HIF2C-30DT-1.27RS |
Staggered Connector Directly Mounted on Board |
Hirose Electric |
3 |
IRFHM830DTRPBF |
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package |
International Rectifier |
4 |
IRGS4630DTRLPBF |
600V Co-Pack IGBT with UltraFast Soft Recovery Diode in a D2-Pak package |
International Rectifier |
5 |
KA3030DTF |
6-Channel Motor Drive IC |
Fairchild Semiconductor |
6 |
KM48S8030DT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
7 |
KM48S8030DT-G_FA |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz |
Samsung Electronic |
8 |
KM48S8030DT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
9 |
KM48S8030DT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
10 |
LSM330DTR |
iNEMO inertial module: 3D accelerometer and 3D gyroscope |
ST Microelectronics |
11 |
M2V64S30DTP |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
12 |
M2V64S30DTP-6 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
13 |
M2V64S30DTP-6 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
14 |
M2V64S30DTP-6L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
15 |
M2V64S30DTP-6L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
16 |
M2V64S30DTP-7 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
17 |
M2V64S30DTP-7 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
18 |
M2V64S30DTP-7L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
19 |
M2V64S30DTP-7L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
20 |
M2V64S30DTP-8 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
21 |
M2V64S30DTP-8 |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
22 |
M2V64S30DTP-8L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
23 |
M2V64S30DTP-8L |
64M Synchronous DRAM |
Mitsubishi Electric Corporation |
24 |
M54HC30DT |
Rad-Hard 8-Input NAND Gate |
ST Microelectronics |
25 |
NCS2530DTB |
Triple 1.1 mA 200 MHz Current Feedback Op Amp with Enable Feature |
ON Semiconductor |
26 |
NCS2530DTBR2 |
Triple 1.1 mA 200 MHz Current Feedback Op Amp with Enable Feature |
ON Semiconductor |
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