| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DMN30H4D0L |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 2 |
DMN30H4D0L-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 3 |
DMN30H4D0L-7 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 4 |
DMN30H4D0LFDE |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 5 |
DMN30H4D0LFDE-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 6 |
DMN30H4D0LFDE-7 |
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 7 |
FRX130H4 |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
| 8 |
MBR30H45CT |
Dual High-Voltage Schottky Rectifiers, Forward Current 30 A |
Vishay |
| 9 |
MBR30H45PT |
Dual Schottky Barrier Rectifier, Forward Current 30 A |
Vishay |
| 10 |
MBRB30H45CT |
Dual High-Voltage Schottky Rectifiers, Forward Current 30 A |
Vishay |
| 11 |
MBRF30H45CT |
Dual High-Voltage Schottky Rectifiers, Forward Current 30 A |
Vishay |
| 12 |
MBRS30H45CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 13 |
RA30H4047M |
400-470MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 14 |
RA30H4047M-01 |
400-470MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 15 |
RA30H4047M-E01 |
400-470MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 16 |
RA30H4452M |
440-520MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 17 |
RA30H4452M-01 |
440-520MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
| 18 |
RA30H4452M-E01 |
440-520MHz 30W 12.5V MOBILE RADIO |
Mitsubishi Electric Corporation |
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