| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D630N2000 |
630A 2000V Power Rectifier Diode |
IPRS Baneasa |
| 2 |
MSAER30N20A |
N Channel MOSFET |
Microsemi |
| 3 |
MSAEZ30N20A |
N Channel MOSFET |
Microsemi |
| 4 |
MSAFR30N20A |
N Channel MOSFET |
Microsemi |
| 5 |
MSAFZ30N20A |
N Channel MOSFET |
Microsemi |
| 6 |
MTV030N201 |
On-screen-display with ayto-sizing controller |
MYSON TECHNOLOGY |
| 7 |
MTV030N202 |
On-screen-display with ayto-sizing controller |
MYSON TECHNOLOGY |
| 8 |
NTB30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 9 |
NTB30N20-D |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 10 |
NTB30N20T4 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 11 |
NTB30N20T4G |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
| 12 |
NTP30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
| 13 |
NTP30N20-D |
Power MOSFET 30 Amps, 200 VoltsN-Channel Enhancement-Mode TO-220 |
ON Semiconductor |
| 14 |
R3130N20EA-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. |
Ricoh |
| 15 |
R3130N20EC-TR |
Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type CMOS. Taping type TR. |
Ricoh |
| 16 |
RND030N20 |
10V Drive Nch Power MOSFET |
ROHM |
| 17 |
RND030N20TL |
10V Drive Nch Power MOSFET |
ROHM |
| | | |
