| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CT30SM-1 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
CT30SM-12 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER � UPS USE |
Mitsubishi Electric Corporation |
| 3 |
CT30SM-12 |
GENERAL INVERTER . UPS USE |
Powerex Power Semiconductors |
| 4 |
FK30SM-5 |
Power MOSFETs: FK Series, 250V Class |
Mitsubishi Electric Corporation |
| 5 |
FK30SM-5 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 6 |
FK30SM-5 |
Transistors>Switching/MOSFETs |
Renesas |
| 7 |
FK30SM-6 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 8 |
FK30SM-6 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 9 |
FK30SM-6 |
Transistors>Switching/MOSFETs |
Renesas |
| 10 |
FS30SM-3 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 11 |
FS30SM-3 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 12 |
FS30SM-5 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 13 |
FS30SM-5 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 14 |
FS30SM-6 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 15 |
FS30SM-6 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 16 |
RB530SM-30 |
Schottky Barrier Diode |
ROHM |
| 17 |
RB530SM-30FH |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 18 |
RB530SM-30FHT2R |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 19 |
RB530SM-30T2R |
Schottky Barrier Diode |
ROHM |
| 20 |
RB530SM-40 |
Schottky Barrier Diode |
ROHM |
| 21 |
RB530SM-40FH |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 22 |
RB530SM-40FHT2R |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 23 |
RB530SM-40T2R |
Schottky Barrier Diode |
ROHM |
| | | |
