Datasheets for 31 A

Datasheets found :: 25 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	IRF6729M	A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance.	International Rectifier
2	IRF6729MTRPBF	A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance.	International Rectifier
3	IRF8302M	30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.	International Rectifier
4	IRF8302MTR1PBF	30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.	International Rectifier
5	NTMFS4120N	Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead	ON Semiconductor
6	STD131 ASIC	Primitive Latches	Samsung Electronic
7	STD131 ASIC	Primitive Flip/Flops	Samsung Electronic
8	STD131 ASIC	Characteristics	Samsung Electronic
9	STD131 ASIC	Package capabilities	Samsung Electronic
10	STD131 ASIC	Introduction	Samsung Electronic
11	STD131 ASIC	Maximum fanout	Samsung Electronic
12	STD131 ASIC	Low Power Memories	Samsung Electronic
13	STD131 ASIC	I/O Cells	Samsung Electronic
14	STD131 ASIC	PLL 2073X	Samsung Electronic
15	STD131 ASIC	I/O& I/O IP Overview	Samsung Electronic
16	STD131 ASIC	Primitive Miscellanies	Samsung Electronic
17	STD131 ASIC	Equivalent standard load for layers	Samsung Electronic
18	STD131 ASIC	STD130 Brochure	Samsung Electronic
19	STD131 ASIC	Glossary of analog terms	Samsung Electronic
20	STD131 ASIC	High Density Memories	Samsung Electronic
21	STD131 ASIC	Book Contents	Samsung Electronic
22	STD131 ASIC	I/O IP Cells	Samsung Electronic
23	STD131 ASIC	Primitive Overview	Samsung Electronic
24	STD131 ASIC	Primitive Logic Cells	Samsung Electronic
25	STGWA19NC60HD	31 A, 600 V, very fast IGBT with Ultrafast diode	ST Microelectronics

Datasheets found :: 25 Page: | 1 |