No. |
Part Name |
Description |
Manufacturer |
1 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
2 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
3 |
PH3135-30M |
3100-3500 MHz, 30 W, 100 ms, radar pulsed power transistor |
MA-Com |
4 |
PH3135-30M |
Radar Pulsed Power Transistor, 3OW, IOOms Pulse, 10% Duty 3.1 - 3.5 GHz |
Tyco Electronics |
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